National Nanofab Center Ministry of Science and ICT KAIST

180nm CMOS Technology

180nm CMOS Batch Processing Platform

Establishment of a batch processing platform using 180nm CMOS technology and support for MPW production through collaboration with industry, academia, and research institutes, contributing to system semiconductor companies and next-generation semiconductor R&D

• Stabilization of 180nm CMOS FEOL module process
  • TEG design
  • Optimization of STI (Shallow Trench Isolation) & Well modules
  • Optimization of Gate (Dual Gox, Poly-Si) modules
  • Optimization of LDD & SD Junction modules
  • Optimization of Silicide (Co Salicide) modules
• Establishment of 180nm CMOS batch processing platform
  • Development of a mix-and-match key placement strategy for aligning between lithography tools
  • Setup of Auto PCM measurement for electrical characteristic evaluation
  • Securing the operation characteristics of NMOS / PMOS transistors
• Establishment of 180nm CMOS batch processing platform PDK

• Establishment of an open MPW service based on feedback from industry, academia, and research institutes, contributing to the flexible technology cooperation model among future fabless-foundry
• Serving as a testbed for early technology commercialization of companies by presenting a technology library based on future demand type specialized materials/devices/processes.
• Contributing to the shortening of commercialization period and cost reduction of companies by supporting technology review and design verification at all stages before product manufacturing based on the platform technology library and systematic process design kit (PDK)

• Open MPW service based on 200mm silicon 180nm CMOS is available
• Poly / Metal: 1 Poly / 6 Metal
• Well : P-sub, Retrograded Twin Well
• Isolation : STI (Shallow Trench Isolation)
• Gate Oxide : NO (Nitirded Oxide)
• Gate Electrode : Dual Gate Oxide, Poly-Si
• Silicide : Co-Salicide
• PMD : PE Nitride / BPSG / PETEOS
• Contact : W-wiring
• Metallization : Ti / Al / Ti / TiN
• IMD : HDP / PE TEOS
• Planarization : Oxide CMP & W CMP
• Passivation : HDP / SiN