본문 바로가기 대메뉴 바로가기

National Nanofab Center

national nanofab center

Thick MEMS

Field Thick MEMS
  • Technology Name

    Thick MEMS process platform through Bulk Micromachining of Si substrate by DRIE process

  • Overview

    This is a process platform that can be applied to inertial, gas, and pressure sensors by fabricating high-aspect-ratio Si structures using Si, SOI, and SOG substrates.

  • Technical Features

    • It is possible to fabricate sensors that can measure various physical and chemical properties through the backside etching of a Si substrate with a formed Membrane and electrode on top.
    • Using SOI, SOG substrates with a certain thickness of Si sacrificial layer, it is possible to fabricate high-aspect-ratio Si structures and create sensors that can measure physical and chemical properties.
    • The substrate and Membrane material, as well as the shape of the Si structure, can be freely modified.
  • Technical Advantages

    • We provide 8-inch based process services, enabling the production of high productivity and various types of devices.
    • Through single-crystal Si structures and highly uniform DRIE processes, reliable and high-yield sensor production is possible in MEMS device fabrication.
    • Ultra-precision photolithography processes allow for the production of ultra-small devices.
  • Application of
    Technology

    • MEMS Sensor through Si Backside Etching: Gas, Pressure Sensors, etc.
    • MEMS Sensor using SOI, SOG Substrate: Inertial, Gas Sensors, etc.
  • Scope of Service and
    Technology Level

    • 8" Si Backside DRIE: Membrane materials (SiOx, SiNx, etc.)
    • SOI, SOG substrate DRIE: BOX, Si Film thickness is Customized
    • Top CD : 100nm ~ 100um
    • AR : 50:1
    • ER :1~5um/min
  • Contact Information

    Person in charge Joo-beom Lee
    Contact 042-366-1571
  • Related Images