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National Nanofab Center

national nanofab center

Thin MEMS

Field Thin MEMS
  • Technology Name

    AlN Thin Film-based MEMS Process Platform

  • Overview

    This is an ultrasonic transducer/resonator-based sensor platform utilizing the piezoelectric properties of C-axis oriented AlN thin films.

  • Technical Features

    • -It is characterized by the use of seed layer deposition and Mo electrode for piezoelectric AlN crystallinity.
    • To minimize the damage of AlN thin film during the process, TMAH is not used and 1 um AlN thin film patterning is performed using dry etching process.
    • DRIE process is performed on the Silicon backside to generate resonance of the device.
  • Technical Advantages

    • We provide 8-inch based process services, enabling high productivity and the fabrication of various types of devices.
    • The high uniformity of AlN films and low residual stress (40>MPa) of 0.5% (1 sigma) allow for the production of MEMS devices with uniform performance.
    • High crystallinity (Rocking curve FWHM less than 1.2 degrees) allows for high piezoelectric performance expectations.
  • Application of
    Technology

    • MEMS Sensors: Ultrasonic imagers, ultrasonic distance sensors, ultrasonic gas sensors, bio sensors
    • Thin film-based resonators/filters: Due to the high acoustic velocity of AlN, it can be used to manufacture FBAR and filters that can be used in 5G.
  • Scope of Service and
    Technology Level

    The National Nanofab Center has the capability to provide AlN-based thin film MEMS process technology, and services can be provided at the following scope and technology level.
    : Support for the development of 200 mm SOI WAFER-based thin film AlN MEMS start-up products

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