National Nanofab Center Ministry of Science and ICT KAIST

Advanced Nano/Semiconductor Material - Nano Patterning/Imprinting Material

We have developed a reversible replica molding technology that can replicate the master nanostructure, which has been processed with a nanostructure pattern with various aspect ratios up to 200 nanometers in size according to the design variables required for nanostructure creation on silicon wafers, onto various materials on the substrate with polymer materials.

• Firstly, we have proposed a method to transfer the micro-nanostructure from the initial Si master nano mold to the polymeric material through a soft lithographic approach. Secondly, we have proposed a reversible transfer technology method that can transfer the micro-nanostructure to the same or different polymeric material using the polymeric material with the transferred micro-nanostructure.
• As a process feature, we have proposed a method to successfully transfer the high aspect ratio nanostructure by controlling the surface energy between materials in the adhesion and demolding stages, which are the most difficult parts in the manufacturing process.

This technology provides a method to efficiently and economically implement a nanostructure with various aspect ratios using various materials that can be applied industrially.

Not only Si but also soft polymer, hard polymer, metal, etc., functional films (anti-reflection and anti-wetting, anti-fogging) semiconductor, MEMS, optical devices (display, photonics, deflective and concentrative materials, etc), physical devices (surface modification, etc), energy devices (electrodes of secondary batteries, fuel cells, solar cells, energy harvesters, etc), biological devices (biochips, biosensors, biomimetic or biosimilar structure, etc), mechanical devices (sensors, and actuators, etc) that require various optical, electrical, electronic, mechanical, and chemical functions can be implemented through the methodology proposed in this study.

It has been shown that it can transfer patterns with a very high aspect ratio of up to 1:10 on a fine line width of 200 nm, and it has also been confirmed that fine patterns with a 200 nm pitch are uniformly replicated using this technology.

Advanced Nano/Semiconductor Material - Sensor/Electrode Nano Material

Development of various functional materials' thin film process using fab process and advanced sensor/electrode nano materials development through nano structuring process based on Secondary Sputtering Lithography (SSL)

Implementation of sensors with excellent sensitivity and response speed, and electrodes with excellent heating performance by uniformly thin-filming and nano-patterning sensor materials and electrode materials suitable for sensor response through an 8-inch fab process

• Increase in surface reaction sites and induction of changes in sensor response characteristics through changes in activation energy by thin-filming and nano-structuring sensor response materials
• Improvement of heating performance and transparency of planar heat emitter through nano-patterned electrode

• High-sensitivity gas sensor application through thin film and nano-pattern process manufacturing of gas response material candidate using fab process
• Transparent nano heater and planar heat emitter through metal nano structure
• Capacitor electrode, EUV pellicle high emissivity film, catalyst, etc.

• Implementation of 10nm or less nano film, 100nm or less nano pattern and nano structure shape control using 8-inch large area sputtering, ALD and ion milling based secondary ion sputtering
• Ru(O2), Au, Ag, Pt, Os, Pd, Sn(O2), Ti(O2), Cu, Al(2O3), Si(O2), Ti3AlC2 MAX, etc.